JPH0390439U - - Google Patents
Info
- Publication number
- JPH0390439U JPH0390439U JP1990089392U JP8939290U JPH0390439U JP H0390439 U JPH0390439 U JP H0390439U JP 1990089392 U JP1990089392 U JP 1990089392U JP 8939290 U JP8939290 U JP 8939290U JP H0390439 U JPH0390439 U JP H0390439U
- Authority
- JP
- Japan
- Prior art keywords
- silicon layer
- amorphous silicon
- electrode
- thin film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6731—Top-gate only TFTs
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019890021037U KR920008675Y1 (ko) | 1989-12-30 | 1989-12-30 | 평판 디스플레이용 박막 트랜지스터 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0390439U true JPH0390439U (en]) | 1991-09-13 |
Family
ID=19294919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990089392U Pending JPH0390439U (en]) | 1989-12-30 | 1990-08-27 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5049952A (en]) |
| JP (1) | JPH0390439U (en]) |
| KR (1) | KR920008675Y1 (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010110602A (ja) * | 2008-11-07 | 2010-05-20 | Yoshihiko Ikeda | 有孔指圧具 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5247194A (en) * | 1991-05-24 | 1993-09-21 | Samsung Electronics Co., Ltd. | Thin film transistor with an increased switching rate |
| US5466953A (en) * | 1993-05-28 | 1995-11-14 | Santa Barbara Research Center | Denuded zone field effect photoconductive detector |
| KR0149311B1 (ko) * | 1995-07-28 | 1998-10-15 | 김광호 | 화소 간 기생 용량 차이가 없는 액정 표시 장치용 기판 |
| KR100495794B1 (ko) | 1997-10-17 | 2005-09-28 | 삼성전자주식회사 | 액정표시장치용박막트랜지스터 |
| KR100333980B1 (ko) * | 1999-04-13 | 2002-04-24 | 윤종용 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
| CN101847640B (zh) * | 2009-03-27 | 2011-12-28 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和液晶面板 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61249078A (ja) * | 1985-04-27 | 1986-11-06 | シャープ株式会社 | マトリクス型表示装置 |
| JPS61261774A (ja) * | 1985-05-16 | 1986-11-19 | 旭硝子株式会社 | 薄膜能動素子基板 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60170261A (ja) * | 1984-02-14 | 1985-09-03 | Fujitsu Ltd | 薄膜トランジスタの構成方法 |
| JPS60213062A (ja) * | 1984-04-09 | 1985-10-25 | Hosiden Electronics Co Ltd | 薄膜トランジスタの製造方法 |
| JPH0740101B2 (ja) * | 1985-04-23 | 1995-05-01 | 旭硝子株式会社 | 薄膜トランジスタ |
| US4803536A (en) * | 1986-10-24 | 1989-02-07 | Xerox Corporation | Electrostatic discharge protection network for large area transducer arrays |
| JPH0691252B2 (ja) * | 1986-11-27 | 1994-11-14 | 日本電気株式会社 | 薄膜トランジスタアレイ |
| JPS6482674A (en) * | 1987-09-25 | 1989-03-28 | Casio Computer Co Ltd | Thin film transistor |
| JP2516030B2 (ja) * | 1987-09-09 | 1996-07-10 | セイコーエプソン株式会社 | 薄膜トランジスタ |
-
1989
- 1989-12-30 KR KR2019890021037U patent/KR920008675Y1/ko not_active Expired
-
1990
- 1990-05-23 US US07/527,270 patent/US5049952A/en not_active Expired - Fee Related
- 1990-08-27 JP JP1990089392U patent/JPH0390439U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61249078A (ja) * | 1985-04-27 | 1986-11-06 | シャープ株式会社 | マトリクス型表示装置 |
| JPS61261774A (ja) * | 1985-05-16 | 1986-11-19 | 旭硝子株式会社 | 薄膜能動素子基板 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010110602A (ja) * | 2008-11-07 | 2010-05-20 | Yoshihiko Ikeda | 有孔指圧具 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR910013027U (ko) | 1991-07-30 |
| US5049952A (en) | 1991-09-17 |
| KR920008675Y1 (ko) | 1992-12-12 |